A Theoretical Investigation of Surface Roughness Scattering in Silicon Nanowire Transistors

Abstract

In this letter, we report a three-dimensional (3D) quantum mechanical simulation to investigate the effects of surface roughness scattering (SRS) on the device characteristics of Si nanowire transistors (SNWTs). We treat the microscopic structure of the Si/SiO2 interface roughness directly by using a 3D finite element technique. The results show that 1) SRS reduces the electron density of states in the channel, which increases the SNWT threshold voltage, and 2) the SRS in SNWTs becomes more effective when more propagating modes are occupied, which implies that SRS is more important in planar metal-oxide-semiconductor field-effect-transistors with many transverse modes occupied than in small-diameter SNWTs with few modes conducting.

13 pages, 4 figures

References in corpus (2)

• A Three-Dimensional Quantum Simulation of Silicon Nanowire Transistors with the Effective-Mass Approximation
• Transport in quantum wells in the presence of interface roughness

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