Coulomb Promotion of Spin-Dependent Tunnelling
arXiv:cond-mat/0502243 · doi:10.1103/PhysRevLett.95.116806
Abstract
We study transport of spin-polarized electrons through a magnetic single-electron transistor (SET) in the presence of an external magnetic field. Assuming the SET to have a nanometer size central island with a single electron level we find that the interplay on the island between coherent spin-flip dynamics and Coulomb interactions can make the Coulomb correlations promote rather than suppress the current through the device. We find the criteria for this new phenomenon -- Coulomb promotion of spin-dependent tunnelling -- to occur.
4 pages, 3 figures; The new version has a slightly modified title, 2 more figures, and an extended analysis of the (same) results obtained
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- Spin controlled nanomechanics induced by single-electron tunneling
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- Electronic spin working mechanically
- Self-excited Oscillations of Charge-Spin Accumulation Due to Single-electron Tunneling
- Interplay of Vibration and Coulomb Effects in Transport of Spin-Polarized Electrons in a Single-Molecule Transistor
- Spin-Polaronic Effects in Electric Shuttling in a Single Molecule Transistor with Magnetic Leads
- Thermoelectric effects in tunneling of spin-polarized electrons in a molecular transistor