Kondo Shuttling in Nanoelectromechanical Single-Electron Transistor

Abstract

We investigate theoretically a mechanically assisted Kondo effect and electric charge shuttling in nanoelectromechanical single-electron transistor (NEM-SET). It is shown that the mechanical motion of the central island (a small metallic particle) with the spin results in the time dependent tunneling width which leads to effective increase of the Kondo temperature. The time-dependent oscillating Kondo temperature T_K(t) changes the scaling behavior of the differential conductance resulting in the suppression of transport in a strong coupling- and its enhancement in a weak coupling regimes. The conditions for fine-tuning of the Abrikosov-Suhl resonance and possible experimental realization of the Kondo shuttling are discussed.

4 pages, 2 eps figures

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Cited by in corpus (13)

• Non adiabatic features of electron pumping through a quantum dot in the Kondo regime
• DC voltage-sustained self-oscillation of a nano-mechanical electron shuttle
• Kondo effect and channel mixing in oscillating molecules
• Discrete breathers in an array of self-excited oscillators: exact solutions and stability
• Time-dependent single electron tunneling through a shuttling nano-island
• Kondo resonance in an ac driven quantum dot subjected to finite bias
• Kondo Force in Shuttling Devices: Dynamical Probe for a Kondo Cloud
• Electronic spin working mechanically
• Tunable RKKY interaction in a double quantum dot nanoelectromechanical device
• Temporal evolution of Seebeck coefficient in an ac driven strongly correlated quantum dot
• Kondo effect in Complex Quantum Dots in the presence of an oscillating and fluctuating gate signal
• Self-sustained oscillations in nanoelectromechanical systems induced by Kondo resonance
• Cotunneling mechanism of single-electron shuttling