Kondo Effect in Electromigrated Gold Break Junctions

Abstract

We present gate-dependent transport measurements of Kondo impurities in bare gold break junctions, generated with high yield using an electromigration process that is actively controlled. Thirty percent of measured devices show zero-bias conductance peaks. Temperature dependence suggests Kondo temperatures \~7K. The peak splitting in magnetic field is consistent with theoretical predictions for g=2, though in many devices the splitting is offset from 2guB by a fixed energy. The Kondo resonances observed here may be due to atomic-scale metallic grains formed during electromigration.

arXiv comment5 pages, 3 figures

References in corpus (12)

• Kondo Physics in a Single Electron Transistor
• A Tunable Kondo Effect in Quantum Dots
• From the Kondo Regime to the Mixed-Valence Regime in a Single-Electron Transistor
• Transport Coefficients of the Anderson Model via the Numerical Renormalization Group
• The Kondo effect in C${}_{60}$ single-molecule transistors
• Kondo effect in a magnetic field and the magnetoresistivity of Kondo alloys
• Measurements of Kondo and spin splitting in single-electron transistors
• Anomalous magnetic splitting of the Kondo resonance
• Studies of spin-orbit scattering in noble-metal nanoparticles using energy level tunneling spectroscopy
• Spin-charge separation and Kondo effect in an open quantum dot
• Transport in single-molecule transistors: Kondo physics and negative differential resistance
• Nanometer-Scale Metallic Grains Connected with Atomic-Scale Conductors

Cited by in corpus (30)

• Single-Molecule Circuits with Well-Defined Molecular Conductance
• Electron transport through single Mn12 molecular magnets
• Advances and challenges in single-molecule electron transport
• Signatures of Molecular Magnetism in Single-Molecule Transport Spectroscopy
• Quantum phase transition in a single-molecule quantum dot
• Kinetic Equations for Transport Through Single-Molecule Transistors
• The role of Joule heating in the formation of nanogaps by electromigration
• The Kondo Effect in the Presence of Magnetic Impurities
• Spin-1/2 Kondo effect in an InAs nanowire quantum dot: the Unitary limit, conductance scaling and Zeeman splitting
• Temperature Control of Electromigration to form Gold Nanogap Junctions
• Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures
• Feedback controlled electromigration in four-terminal nano-junctions
• Electronic and optical properties of electromigrated molecular junctions
• From ballistic transport to tunneling in electromigrated ferromagnetic breakjunctions
• At which magnetic field, exactly, does the Kondo resonance begin to split? A Fermi liquid description of the low-energy properties of the Anderson model
• Feedback-controlled electromigration for the fabrication of point contacts
• Scanning probe microscopy imaging of metallic nanocontacts
• A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching
• Gate Coupling to Nanoscale Electronics
• Magnetic Field Universality of the Kondo Effect Revealed by Thermocurrent Spectroscopy
• Scope of Magnetic Tunnel Junction Based Molecular Electronics and Spintronics Devices
• An investigation into the feasibility of myoglobin-based single-electron transistors
• Unusual resistance-voltage dependence of nanojunctions during electromigration in ultra-high vacuum
• Out-of-equilibrium singlet-triplet Kondo effect in a single C_60 quantum dot
• Two-dimensional simulations of temperature and current-density distribution in electromigrated structures
• Kondo effect in nanostructures
• Structure and local charging of electromigrated Au nanocontacts
• Monte Carlo Study of a wide range of Molecular Spintronics Devices
• Kondo effects in a C_60 single-molecule transistor
• Supplementary Information: Quantum phase transition in a single-molecule quantum dot