Feedback controlled electromigration in four-terminal nano-junctions

Abstract

We have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). We employ four-terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage $U$ over the junction constant. After the initialization phase ($U<0.2V),duringwhichthetemperature$T$increasesby80-150degsC,EMsetsinshrinkingthewirelocally.Thisquicklyleadstoatransitionfromthediffusivetoaquasi-ballisticregime($0.2V < U < 0.6V). At the end of this second regime, a gap forms (U > 0.6V). Remarkably, controlled electromigration is still possible in the quasi-ballistic regime.

References in corpus (5)

• Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics
• Kondo Effect in Electromigrated Gold Break Junctions
• The role of Joule heating in the formation of nanogaps by electromigration
• The Kondo Effect in the Presence of Magnetic Impurities
• Temperature Control of Electromigration to form Gold Nanogap Junctions

Cited by in corpus (12)

• Quantum phase transition in a single-molecule quantum dot
• Direct measurement of the Seebeck coefficient in a Kondo-correlated single-quantum-dot transistor
• Feedback-controlled electromigration for the fabrication of point contacts
• Multilevel Resistance Switching and Enhanced Spin Transition Temperature in Single Molecule Spin Crossover Nanogap Devices
• Scaling of 1/f noise in tunable break-junctions
• Scanning probe microscopy imaging of metallic nanocontacts
• Current-induced energy barrier suppression for electromigration from first principles
• Out-of-equilibrium singlet-triplet Kondo effect in a single C_60 quantum dot
• Two-dimensional simulations of temperature and current-density distribution in electromigrated structures
• Structure and local charging of electromigrated Au nanocontacts
• Pre-determining the location of electromigrated gaps by nonlinear optical imaging
• Kondo effects in a C_60 single-molecule transistor