Feedback controlled electromigration in four-terminal nano-junctions

Zheng-Ming Wu; Michael Steinacher; Roman Huber; Michel Calame; Sense Jan van der Molen; Christian Schonenberger

doi:10.1063/1.2760150

paper

Feedback controlled electromigration in four-terminal nano-junctions

arXiv:cond-mat/0703649 · doi:10.1063/1.2760150

Abstract

We have developed a fast, yet highly reproducible method to fabricate metallic electrodes with nanometer separation using electromigration (EM). We employ four-terminal instead of two-terminal devices in combination with an analog feedback to maintain the voltage $U$ over the junction constant. After the initialization phase ( $U < 0.2 V), d u r in g w hi c h t h e t e m p er a t u r e$ T $in cr e a ses b y 80 - 150 d e g s C, E M se t s in s h r ink in g t h e w i r e l oc a l l y . T hi s q u i c k l y l e a d s t o a t r an s i t i o n f r o m t h e d i f f u s i v e t o a q u a s i - ba l l i s t i cr e g im e ($ 0.2V < U < 0.6V). At the end of this second regime, a gap forms (U > 0.6V). Remarkably, controlled electromigration is still possible in the quasi-ballistic regime.

Feedback controlled electromigration in four-terminal nano-junctions

Abstract

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