Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures

Abstract

We report a method for fabricating nanogaps directly with electron beam lithography (EBL). The primary resolution-limit of EBL, electron back-scattering, is reduced dramatically by using a thin-film as a substrate. We show that this resolution enhancement allows one to fabricate metal electrodes with separation from arbitrarily large to under one nanometer. Furthermore, because these nanogaps are on a thin film, they can be imaged with high-resolution transmission electron microscopy (HRTEM). Using these nanogaps we measured the charge transport through several coupled PbSe nanocrystals and correlated the data with detailed structural information obtained by performing HRTEM on the same device.

9 pages, 3 figures

References in corpus (5)

• A single-electron transistor made from a cadmium selenide nanocrystal
• Controlled Fabrication of Metallic Electrodes with Atomic Separation
• Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics
• Kondo Effect in Electromigrated Gold Break Junctions
• Nanometer-spaced platinum electrodes with calibrated separation

Cited by in corpus (6)

• Electron beam nanosculpting of suspended graphene sheets
• Nanogaps with very large aspect ratios for electrical measurements
• Feedback-controlled electromigration for the fabrication of point contacts
• Controlling Nanogap Quantum Dot Photoconductivity through Optoelectronic Trap Manipulation
• Scope of Magnetic Tunnel Junction Based Molecular Electronics and Spintronics Devices
• Fabrication of Metal Nanoscale Devices on Insulating Membranes by High-Resolution Atom Ablation