Nanogaps with very large aspect ratios for electrical measurements

Abstract

For nanoscale electrical characterization and device fabrication it is often desirable to fabricate planar metal electrodes separated by large aspect ratio gaps with interelectrode distances well below 100 nm. We demonstrate a self-aligned process to accomplish this goal using a thin Cr film as a sacrificial etch layer. The resulting gaps can be as small as 10 nm and have aspect ratios exceeding 1000, with excellent interelectrode isolation. Such Ti/Au electrodes are demonstrated on Si substrates and are used to examine a voltage-driven transition in magnetite nanostructures. This shows the utility of this fabrication approach even with relatively reactive substrates.

4 pages, 4 figures

References in corpus (5)

• Controlled Fabrication of Nanogaps in Ambient Environment for Molecular Electronics
• Electrically-driven phase transition in magnetite nanostructures
• Nanometer-spaced platinum electrodes with calibrated separation
• Nanogaps by direct lithography for high-resolution imaging and electronic characterization of nanostructures
• Single-Walled Carbon Nanotubes as Shadow Masks for Nanogap Fabrication

Cited by in corpus (13)

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• Interfacial charge transfer in nanoscale polymer transistors
• Local charge transfer doping in suspended graphene nanojunctions
• Statistical distribution of the electric field driven switching of the Verwey state in Fe3O4
• Trapping and electrical characterization of single core/shell iron-based nanoparticles in self-aligned nanogaps
• Platinum contacts for 9-atom-wide armchair graphene nanoribbons