Superconducting and Normal State Properties of Heavily Hole-Doped Diamond

Abstract

We report measurements of the specific heat, Hall effect, upper critical field and resistivity on bulk, B-doped diamond prepared by reacting amorphous B and graphite under high-pressure/high-temperature conditions. These experiments establish unambiguous evidence for bulk superconductivity and provide a consistent set of materials parameters that favor a conventional, weak coupling electron-phonon interpretation of the superconducting mechanism at high hole doping.

arXiv comment10 pages, 3 figures

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• Low-Temperature and High-Energy-Resolution Laser Photoemission Spectroscopy
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• Boron Spectral Density and Disorder Broadening in B-doped Diamond
• High-pressure behavior of superconducting boron-doped diamond
• Localization and Superconductivity in Doped Semiconductors
• Effect of boron dimers on the superconducting critical temperature in boron-doped diamond
• Superconductivity of hexagonal heavily-boron doped silicon carbide