Suppression of Dyakonov-Perel Spin Relaxation in high mobility n-GaAs

Abstract

We report a large and unexpected suppression of the free electron spin relaxation in lightly-doped n-GaAs bulk crystals. The spin relaxation rate shows weak mobility dependence and saturates at a level 30 times less then that predicted by the Dyakonov-Perel theory. The dynamics of the spin-orbit field differs substantially from the usual scheme: although all the experimental data can be self-consistently interpreted as a precessional spin relaxation induced by a random spin-orbit field, the correlation time of this random field, surprisingly, is much shorter than, and is independent of, the momentum relaxation time determined from transport measurements. Understanding of this phenomenon could lead to high temperature engineering of the electron spin memory.

References in corpus (3)

• Efficient Electrical Spin Injection from a Magnetic Metal / Tunnel Barrier Contact into a Semiconductor
• Low-temperature spin relaxation in n-type GaAs
• Spin relaxation of conduction electrons in bulk III-V semiconductors

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