Effect of an InP/In$_{0.53}$Ga$_{0.47}$As Interface on Spin-orbit Interaction in In$_{0.52}$Al$_{0.48}$As/In$_{0.53}$Ga$_{0.47}$As Heterostructures

Y. Lin; T. Koga; J. Nitta

doi:10.1103/PhysRevB.71.045328

paper

Effect of an InP/In $_{0.53}$ Ga $_{0.47}$ As Interface on Spin-orbit Interaction in In $_{0.52}$ Al $_{0.48}$ As/In $_{0.53}$ Ga $_{0.47}$ As Heterostructures

arXiv:cond-mat/0407020 · doi:10.1103/PhysRevB.71.045328

Abstract

We report the effect of the insertion of an InP/In $_{0.53}$ Ga $_{47}$ As Interface on Rashba spin-orbit interaction in In $_{0.52}$ Al $_{0.48}$ As/In $_{0.53}$ Ga $_{0.47}$ As quantum wells. A small spin split-off energy in InP produces a very intriguing band lineup in the valence bands in this system. With or without this InP layer above the In $_{0.53}$ Ga $_{47}$ As well, the overall values of the spin-orbit coupling constant $I^\pm$ turned out to be enhanced or diminished for samples with the front- or back-doping position, respectively. These experimental results, using weak antilocalization analysis, are compared with the results of the $k \cdot p$ theory. The actual conditions of the interfaces and materials should account for the quantitative difference in magnitude between the measurements and calculations.

Submitted for publication; v2 to adjust Eq.6; v3 to correct the figure file name; v4, a revised version accepted for publication in Phys. Rev. B

Effect of an InP/In0.53​Ga0.47​As Interface on Spin-orbit Interaction in In0.52​Al0.48​As/In0.53​Ga0.47​As Heterostructures

Abstract

Effect of an InP/In $_{0.53}$ Ga $_{0.47}$ As Interface on Spin-orbit Interaction in In $_{0.52}$ Al $_{0.48}$ As/In $_{0.53}$ Ga $_{0.47}$ As Heterostructures