Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers
arXiv:cond-mat/0407001 · doi:10.1002/pssb.200510030
Abstract
Germanium-based alloys hold great promise for future spintronics applications, due to their potential for integration with conventional Si-based electronics. Mn5Ge3 exhibits strong ferromagnetism up to the Curie temperature Tc~295K. We use Point Contact Andreev Reflection (PCAR) spectroscopy to measure the spin polarization of Mn5Ge3 epilayers grown by solid phase epitaxy on Ge(111). In addition, we calculate the spin polarization of bulk Mn5Ge3 in the diffusive and ballistic regimes using density-functional theory. The measured spin polarization, Pc=43+/-5% is compared to our theoretical estimates, PDFT=10+/-5% and 35+/-5% in the ballistic and diffusive limits respectively.
arXiv comment13 pages, 3 figures
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Cited by in corpus (6)
- Non-collinear Magnetic states of Mn5Ge3 compound
- Magnetotransport in ferromagnetic Mn5Ge3, Mn5Ge3C0.8, and Mn5Si3C0.8 thin films
- High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction
- Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge3
- Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing
- Signatures of electron-boson coupling in half-metallic ferromagnet MnGe: study of electron self-energy obtained from infrared spectroscopy