High Curie temperature Mn 5 Ge 3 thin films produced by non-diffusive reaction

Abstract

Polycrystalline Mn 5 Ge 3 thin films were produced on SiO 2 using magnetron sputtering and reactive diffusion (RD) or non-diffusive reaction (NDR). In situ X-ray diffraction and atomic force microscopy were used to determine the layer structures, and magnetic force microscopy, superconducting quantum interference device and ferromagnetic resonance were used to determine their magnetic properties. RD-mediated layers exhibit similar magnetic properties as MBE-grown monocrystalline Mn 5 Ge 3 thin films, while NDR-mediated layers show magnetic properties similar to monocrystalline C-doped Mn 5 Ge 3 C x thin films with $0.1\le x\le \mathrm{0.2.}$ NDR appears as a CMOS-compatible efficient method to produce good magnetic quality high-curie temperature Mn 5 Ge 3 thin films.

References in corpus (6)

• First-principles characterization of ferromagnetic Mn5Ge3 for spintronic applications
• Strongly Enhanced Curie Temperature in Carbon-Doped Mn5Ge3 Films
• Spin Polarization and Electonic Structure of Room-Curie Ferromagnetic Mn5Ge3 Epilayers
• Simulation of the enhanced Curie temperature in Mn_5Ge_3C_x compounds
• Hanle-effect measurements of spin injection from Mn5Ge3C0.8/Al2O3-contacts into degenerately doped Ge channels on Si
• Ferromagnetic resonance and magnetic damping in C-doped Mn5Ge3

Cited by in corpus (1)

• Epitaxial Mn5Ge3 (100) layer on Ge(100) substrates obtained by flash lamp annealing