Shot Noise in Linear Macroscopic Resistors

Abstract

We report on a direct experimental evidence of shot noise in a linear macroscopic resistor. The origin of the shot noise comes from the fluctuation of the total number of charge carriers inside the resistor associated with their diffusive motion under the condition that the dielectric relaxation time becomes longer than the dynamic transit time. Present results show that neither potential barriers nor the absence of inelastic scattering are necessary to observe shot noise in electronic devices.

10 pages, 5 figures

References in corpus (7)

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Cited by in corpus (3)

• What can we learn about the dynamics of transported spins by measuring shot noise in spin-orbit-coupled nanostructures?
• Duality and reciprocity of fluctuation-dissipation relations in conductors
• Learning to measure resistance noise demystifies the ubiquitous 1/f excess noise