Atom Chips: Fabrication and Thermal Properties

Abstract

Neutral atoms can be trapped and manipulated with surface mounted microscopic current carrying and charged structures. We present a lithographic fabrication process for such atom chips based on evaporated metal films. The size limit of this process is below 1$\mu$m. At room temperature, thin wires can carry more than 10${}^7$A/cm${}^2$ current density and voltages of more than 500V. Extensive test measurements for different substrates and metal thicknesses (up to 5 $\mu$m) are compared to models for the heating characteristics of the microscopic wires. Among the materials tested, we find that Si is the best suited substrate for atom chips.

References in corpus (9)

• Realization of Bose-Einstein condensates in lower dimensions
• Atom Chips
• Bose-Einstein condensates near a microfabricated surface
• Surface Effects in Magnetic Microtraps
• Disordered Bose-Einstein Condensates in Quasi One-Dimensional Magnetic Microtraps
• Bose-Einstein Condensation in a simple Microtrap
• Trapping and manipulating neutral atoms with electrostatic fields
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• Microelectromagnets for Trapping and Manipulating Ultracold Atomic Quantum Gases

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