A unified treatment of current-induced instabilities on Si surfaces
arXiv:cond-mat/0403488 · doi:10.1103/PhysRevB.70.161303
Abstract
We introduce a simple two region model where the diffusion constant in a small region around each step on a vicinal surface can differ from that found on the terraces. Steady state results for this model provide a physically suggestive mapping onto kinetic coefficients in the conventional sharp-step model, with a negative coefficient arising from faster diffusion in the step region. A linear stability analysis of the resulting sharp-step model provides a unified and simple interpretation of many experimental results for current-induced step bunching and wandering instabilities on both Si(111) and Si(001) surfaces.
4 pages, 1 figure. Submitted to Phys. Rev. Lett
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Cited by in corpus (8)
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