High-Performance Carbon Nanotube Transistors on SrTiO3/Si Substrates
arXiv:cond-mat/0401591 · doi:10.1063/1.1682691
Abstract
Single-walled carbon nanotubes (SWNTs) have been grown via chemical vapor deposition on high-kappa dielectric SrTiO3/Si substrates, and high-performance semiconducting SWNT field-effect transistors have been fabricated using the thin SrTiO3 as gate dielectric and Si as gate electrode. The transconductance per channel width is 8900 S/m. The high transconductance cannot be explained by the increased gate capacitance; it is proposed that the increased electric field at the nanotube-electrode interface due to the high-kappa SrTiO3 decreases or eliminates the nanotube-electrode Schottky barrier.
13 pages, 1 table, 3 figures, to appear in Appl. Phys. Lett
References in corpus (4)
Cited by in corpus (13)
- High Performance N-Type Carbon Nanotube Field Effect Transistors with Chemically Doped Contacts
- Bethe-Ansatz density-functional theory of ultracold repulsive fermions in one-dimensional optical lattices
- Ground-state energy of the electron liquid in ultrathin wires
- Crosstalk between nanotube devices: contact and channel effects
- Correlation effects in quasi one dimensional electron wires
- Properties of short channel ballistic carbon nanotube transistors with ohmic contacts
- Exchange interaction in quantum rings and wires in the Wigner-crystal limit
- Short-range correlations and spin-mode velocities in ultrathin one-dimensional conductors
- Phase diagram of a quantum Coulomb wire
- One-dimensional electron fluid at high density
- Monte Carlo study of coaxially gated CNTFETs: capacitive effects and dynamic performance
- Shot noise of a multiwalled carbon nanotube field effect transistor
- Electron correlation and confinement effects in quasi-one-dimensional quantum wires at high density