Shot noise of a multiwalled carbon nanotube field effect transistor

Abstract

We have investigated shot noise in a 6-nm-diameter, semiconducting multiwalled carbon nanotube FET at 4.2 K over the frequency range 600 - 950 MHz. We find a transconductance of 3 - 3.5 $\mu$S for optimal positive and negative source-drain voltages V. For the gate referred input voltage noise, we obtain 0.2 and 0.3 $\mu V/\sqrt{Hz}$ for V>0 and V<0, respectively. As effective charge noise this corresponds to $2-3\cdot 10^{-5}$ e/$\sqrt{Hz}$.

5 pages, 5 figures, submitted

References in corpus (8)

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• Evanescent wave transport and shot noise in graphene: ballistic regime and effect of disorder
• Transport through single-wall metallic carbon nanotubes in the cotunneling regime
• Shot Noise Suppression and Hopping Conduction in Graphene Nanoribbons
• Shot Noise in Lithographically Patterned Graphene Nanoribbons
• Thermal shot noise in top-gated single carbon nanotube field effect transistors