Coherently photo-induced ferromagnetism in diluted magnetic semiconductors
arXiv:cond-mat/0312445 · doi:10.1103/PhysRevLett.93.127201
Abstract
Ferromagnetism is predicted in undoped diluted magnetic semiconductors illuminated by intense sub-bandgap laser radiation . The mechanism for photo-induced ferromagnetism is coherence between conduction and valence bands induced by the light which leads to an optical exchange interaction. The ferromagnetic critical temperature T_C depends both on the properties of the material and on the frequency and intensity of the laser and could be above 1 K.
11 pages, 2 figures, preprint style
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