Modelling of strain effects in manganite films

Abstract

Thickness dependence and strain effects in films of $L{a}_{1-x}{A}_{x}Mn{O}_3$ perovskites are analyzed in the colossal magnetoresistance regime. The calculations are based on a generalization of a variational approach previously proposed for the study of manganite bulk. It is found that a reduction in the thickness of the film causes a decrease of critical temperature and magnetization, and an increase of resistivity at low temperatures. The strain is introduced through the modifications of in-plane and out-of-plane electron hopping amplitudes due to substrate-induced distortions of the film unit cell. The strain effects on the transition temperature and transport properties are in good agreement with experimental data only if the dependence of the hopping matrix elements on the $Mn-O-Mn$ bond angle is properly taken into account. Finally variations of the electron-phonon coupling linked to the presence of strain turn out important in influencing the balance of coexisting phases in the film

7 figures. To be published on Physical Review B

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• Manipulation of the magnetic order parameter and the metal-insulator-transition of a manganite thin film with applied elastic stress
• Strain-induced topological phase transition at (111) SrTiO${}_3$-based heterostructures
• Electron-lattice and strain effects in manganite heterostructures: the case of a single interface
• Multi-Fields Modulation of Physical Properties of Oxide Thin Films
• Anisotropy in the thermal hysteresis of resistivity and charge density wave nature of single crystal SrFeO3-delta: X-ray absorption and photoemission studies