paper

Strain effect on electronic transport and ferromagnetic transition temperature in LaSrMnO thin films

arXiv:cond-mat/0203196 · doi:10.1103/PhysRevB.65.174402

Abstract

We report on a systematic study of strain effects on the transport properties and the ferromagnetic transition temperature of high-quality LaSrMnO thin films epitaxially grown on (100) SrTiO substrates. Both the magnetization and the resistivity are critically dependent on the film thickness. is enhanced with decreasing the film thickness due to the compressive stain produced by lattice mismatch. The resistivity above 165 K of the films with various thicknesses is consistent with small polaronic hopping conductivity. The polaronic formation energy is reduced with the decrease of film thickness. We found that the strain dependence of mainly results from the strain-induced electron-phonon coupling. The strain effect on is in good agreement with the theoretical predictions.

6 pages and 5 figures, accepted for publication in Phys. Rev. B