Metal-nanoparticle single-electron transistors fabricated using electromigration
arXiv:cond-mat/0310594 · doi:10.1063/1.1695203
Abstract
We have fabricated single-electron transistors from individual metal nanoparticles using a geometry that provides improved coupling between the particle and the gate electrode. This is accomplished by incorporating a nanoparticle into a gap created between two electrodes using electromigration, all on top of an oxidized aluminum gate. We achieve sufficient gate coupling to access more than ten charge states of individual gold nanoparticles (5-15 nm in diameter). The devices are sufficiently stable to permit spectroscopic studies of the electron-in-a-box level spectra within the nanoparticle as its charge state is varied.
3 pages, 3 figures, submitted to APL
References in corpus (8)
- Spectroscopy of discrete energy levels in ultrasmall metallic grains
- Gate-Voltage Studies of Discrete Electronic States in Al Nanoparticles
- Fabrication of nanometer-spaced electrodes using gold nanoparticles
- Correlations between Ground and Excited State Spectra of a Quantum Dot
- Spectroscopy, Interactions and Level Splittings in Au Nanoparticles
- Tunneling through a multigrain system: deducing the sample topology from the nonlinear conductance
- Equilibrium and non-equilibrium electron tunneling via discrete quantum states
- Fluctuations of g-factors in metal nanoparticles: Effects of electron-electron interaction and spin-orbit scattering
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- Metal nanoparticle film-based room temperature Coulomb transistor
- A Silicon Cluster Based Single Electron Transistor with Potential Room-Temperature Switching
- Mesoscopic competition of superconductivity and ferromagnetism: conductance peak statistics in metallic grains
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- Controlled fabrication of single electron transistors from single-walled carbon nanotubes
- Random Telegraph Signal in a Metallic Double-Dot System
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- The Synthesis and Electrical Transport of Ligand-Protected Au13 Clusters
- Electrical transport through self-assembled colloidal nanomaterials and their perspectives
- Pre-determining the location of electromigrated gaps by nonlinear optical imaging
- Utility of NISQ devices: optimizing experimental parameters for the fabrication of Au atomic junction using gate-based quantum computers
- Spin-orbit scattering in superconducting nanoparticles
- Mesoscopic interplay of superconductivity and ferromagnetism in ultra-small metallic grains