Metal nanoparticle film-based room temperature Coulomb transistor
arXiv:1707.04717 · doi:10.1126/sciadv.1603191
Abstract
Single-electron transistors would represent an approach for less power consuming microelectronic devices if room-temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages: By employing the scalable Langmuir-Blodgett method we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90 %, reliable and sinusoidal Coulomb oscillations and room-temperature operation. Furthermore, this concept allows for versatile tuning of the device properties like Coulomb-energy gap, threshold voltage, as well as period, position and strength of the oscillations.
arXiv comment31 pages, 6 figures
References in corpus (7)
- Electronic Transport in Metal Nanocrystal Arrays: The Effect of Structural Disorder on Scaling Behavior
- Metal-nanoparticle single-electron transistors fabricated using electromigration
- Preparation and electrical properties of cobalt-platinum nanoparticle monolayers deposited by the Langmuir-Blodgett technique
- On the electric conductivity of highly ordered monolayers of monodisperse metal nanoparticles
- Tunable electrical transport through annealed monolayers of monodisperse cobalt-platinum nanoparticles
- Coulomb blockade based field-effect transistors exploiting stripe-shaped channel geometries of self-assembled metal nanoparticles
- Metal nanoparticle field-effect transistor