Growth of Single Unit-Cell Superconducting La${}_{2-x}$Sr${}_x$CuO${}_4$ Films

Abstract

We have developed an approach to grow high quality ultrathin films of La${}_{2-x}$Sr${}_x$CuO${}_4$ with molecular beam epitaxy, by adding a homoepitaxial buffer layer in order to minimize the degradation of the film structure at the interface. The advantage of this method is to enable a further reduction of the minimal thickness of a superconducting La${}_{1.9}$Sr${}_{0.1}$CuO${}_4$ film. The main result of our work is that a single unit cell (only two copper oxide planes) grown on a SrLaAlO${}_4$ substrate exhibits a superconducting transition at 12.5 K (zero resistance) and an in-plane magnetic penetration depth ${\lambda }_{ab}(0)$ = 535 nm.

to be published in "Solid State Electonics" special issue, conference proceedings of the 9th Workshop on Oxide Electronics, St-Pete Beach, FL, 20-23 november 2002 : 12 pages 4 figures in preprint version

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