29 citations · 52 across the 5 of their papers we have counts for
9 papers
An efficient direct band-gap transition in germanium by three-dimensional strain
Simon Mellaerts, Valeri Afanasiev, Jin Won Seo +2
Complementary to the development of highly three-dimensional (3D) integrated circuits in the continuation of Moore's law, there has been a growing interest in new 3D deformation st…
Quarter-filled Kane-Mele Hubbard model: Dirac half-metals
Simon Mellaerts, Ruishen Meng, Valeri Afanasiev +3
Recent experimental success in the realization of two-dimensional (2D) magnetism has stimulated the search for new magnetic 2D materials with strong magnetic anisotropy and high Cu…
Two-dimensional honeycomb-kagome V2O3: a robust room-temperature magnetic Chern insulator interfaced with graphene
Simon Mellaerts, Ruishen Meng, Mariela Menghini +4
The possibility of dissipationless chiral edge states without the need of an external magnetic field in the quantum anomalous Hall effect (QAHE) offers a great potential in electro…
Non-thermal light-assisted resistance collapse in a VO-based Mott-insulator device
Andrea Ronchi, Paolo Franceschini, Pia Homm +7
The insulator-to-metal transition in Mott insulators is the key mechanism for a novel class of electronic devices, belonging to the Mottronics family. Intense research efforts are…
Temporal dynamics of all-optical switching in hybrid VO2/Si waveguides
Jorge Parra, Todora Ivanova, Mariela Menghini +3
Vanadium dioxide (VO2) is one of the most promising materials for developing hybrid photonic integrated devices (PICs). However, despite switching times as low as a few femtosecond…
Comment on "Unveiling the double-well energy landscape in a ferroelectric layer"
J. A. Kittl, M. Houssa, V. V. Afanasiev +1
Analysis of data presented in the paper -- Unveiling the double-well energy landscape in a ferroelectric layer, by M. Hoffmann, et al., Nature 565, 464 (2019) -- suggesting the cla…