J. Locquet

activity

19992026

most citedRoom temperature Mott metal-insulator transition in V2O3 compounds induced via strain-engineering

60 citations · 441 across the 29 of their papers we have counts for

collaborators

Showing 2015Show all

2 papers · 1 filter

cond-mat.str-el2015★ 22 cited

Collapse of the low temperature insulating state in Cr-doped V $_{2}$ O $_{3}$ thin films

Pía Homm, Leander Dillemans, Mariela Menghini +10

We have grown epitaxial Cr-doped V $_{2}$ O $_{3}$ thin films with Cr concentrations between $0$ and $20%$ on $(0001)$ -Al $_{2}$ O $_{3}$ by oxygen-assisted molecular beam epitaxy. For the high…

cond-mat.str-el2015★ 7 cited

An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach

Petar Bakalov, Davoud Nasr Esfahani, Lucian Covaci +3

Simulations are carried out based on the dynamical mean-field theory (DMFT) in order to investigate the properties of correlated thin films for various values of the chemical poten…

Collapse of the low temperature insulating state in Cr-doped V2​O3​ thin films

An electric-field driven Mott metal-insulator transition in correlated thin films: an inhomogeneous dynamical mean-field theory approach

Collapse of the low temperature insulating state in Cr-doped V $_{2}$ O $_{3}$ thin films