Superconductivity and charge carrier localization in ultrathin bilayers
arXiv:1705.06587 · doi:10.1103/PhysRevB.95.214506
Abstract
/ (LSCO15/LCO) bilayers with a precisely controlled thickness of N unit cells (UCs) of the former and M UCs of the latter ([LSCO15\_N/LCO\_M]) were grown on (001)-oriented {\slao} (SLAO) substrates with pulsed laser deposition (PLD). X-ray diffraction and reciprocal space map (RSM) studies confirmed the epitaxial growth of the bilayers and showed that a [LSCO15\_2/LCO\_2] bilayer is fully strained, whereas a [LSCO15\_2/LCO\_7] bilayer is already partially relaxed. The \textit{in situ} monitoring of the growth with reflection high energy electron diffraction (RHEED) revealed that the gas environment during deposition has a surprisingly strong effect on the growth mode and thus on the amount of disorder in the first UC of LSCO15 (or the first two monolayers of LSCO15 containing one plane each). For samples grown in pure gas (growth type-B), the first LSCO15 UC next to the SLAO substrate is strongly disordered. This disorder is strongly reduced if the growth is performed in a mixture of and gas (growth type-A). Electric transport measurements confirmed that the first UC of LSCO15 next to the SLAO substrate is highly resistive and shows no sign of superconductivity for growth type-B, whereas it is superconducting for growth type-A. Furthermore, we found, rather surprisingly, that the conductivity of the LSCO15 UC next to the LCO capping layer strongly depends on the thickness of the latter. A LCO capping layer with 7~UCs leads to a strong localization of the charge carriers in the adjacent LSCO15 UC and suppresses superconductivity. The magneto-transport data suggest a similarity with the case of weakly hole doped LSCO single crystals that are in a so-called {"{cluster-spin-glass state}"}
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