Tip-gating Effect in Scanning Impedance Microscopy of Nanoelectronic Devices

Abstract

Electronic transport in semiconducting single-wall carbon nanotubes is studied by combined scanning gate microscopy and scanning impedance microscopy (SIM). Depending on the probe potential, SIM can be performed in both invasive and non-invasive mode. High-resolution imaging of the defects is achieved when the probe acts as a local gate and simultaneously an electrostatic probe of local potential. A class of weak defects becomes observable even if they are located in the vicinity of strong defects. The imaging mechanism of tip-gating scanning impedance microscopy is discussed.

arXiv comment11 pages, 3 figures, to be published in Appl. Phys. Lett

References in corpus (4)

• Carbon Nanotubes as Schottky Barrier Transistors
• Scanned Probe Microscopy of Electronic Transport in Carbon Nanotubes
• Role of Single Defects in Electronic Transport through Carbon Nanotube Field-Effect Transistors
• Carbon nanotubes as a tip calibration standard for electrostatic scanning probe microscopies

Cited by in corpus (1)

• Photoluminescence from single walled carbon nanotubes: a comparison between suspended and micelle-encapsulated nanotubes