Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
arXiv:cond-mat/0210048 · doi:10.1088/0953-2048/16/2/320
Abstract
High quality MgB2 thin films have been obtained by pulsed laser deposition both on MgO and on Al2O3 substrates using different methods. In the standard two-step procedure, an amorphous precursor layer is deposited at room temperature starting both from stoichiometric target and from boron target: after this first step, it is annealed in magnesium atmosphere in order to crystallize the superconducting phase. The so obtained films show a strong c-axis orientation, evidenced by XRD analysis, a critical temperature up to 38 K and very high critical fields along the basal planes, up to 22T at 15K. Also an in situ one step technique for the realization of superconducting MgB2 thin films has been developed. In this case, the presence of an argon buffer gas during deposition is crucial and we observe a strong dependence of the quality of the deposited film on the background gas pressure. The influence of the Ar atmosphere has been confirmed by time and space-resolved spectroscopy measurements on the emission spectrum of the plume. The Ar pressure modifies strongly the plasma kinetics by promoting excitation and ionization of the plume species, especially of the most volatile Mg atoms, increasing their internal energy.
Paper presented at Boromag Workshop, Genoa 17-19 June 2002, in press on SUST
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- Pulsed Laser Deposition of epitaxial titanium diboride thin films
- Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method
- Upper critical fields of MgB2 thin films
- Point-Contact Spectroscopy in MgB_2: from Fundamental Physics to Thin-Film Characterization
- Epitaxial MgB2 thin films on ZrB2 buffer layers: structural characterization by synchrotron radiation