Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition

Abstract

The electronic anisotropy in MgB2, is still a not completely clear topic; high quality c-oriented films are suitable systems to investigate this property. In this work we present our results on MgB2 superconducting thin films grown on MgO and sapphire substrates. The films are deposited in high vacuum, at room temperature, by Laser Ablation, starting from two different targets: pure Boron and stoichiometric MgB2. In both cases, to obtain and crystallize the superconducting phase, an ex-situ annealing in magnesium vapor is needed. The films were characterized by Synchrotron radiation diffraction measurements; the films turned out to be strongly c-oriented, with the c-axis perpendicular to the film surface and an influence of the substrate on crystallographic parameters is observed. Resisivity measurements with the magnetic field perpendicular and parallel directions to the film surface evidenced an anisotropic upper critical field behavior. The Hc2 ratios (h) resulted in the range 1.2-1.8; this difference will be discussed also in comparison with the literature data.

presented at ISS 2001,Kobe,Japan. submitted to Physica C

References in corpus (8)

• Single crystal MgB2 with anisotropic superconducting properties
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• Electronic anisotropy, magnetic field-temperature phase diagram and their dependence on resistivity in c-axis oriented MgB2 thin films
• Anisotropic superconducting properties of aligned MgB2 crystallites
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• Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy
• In-situ Magnesium Diboride Superconducting Thin Films grown by Pulsed Laser Deposition

Cited by in corpus (5)

• Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
• Nanogranular MgB2 thin films on SiC buffered Si substrates prepared by in-situ method
• Upper critical fields of MgB2 thin films
• Coherence lengths and anisotropy in MgB2 superconductor
• Epitaxial MgB2 thin films on ZrB2 buffer layers: structural characterization by synchrotron radiation