Superconducting thin films of MgB2 on (001)-Si by pulsed laser deposition
arXiv:cond-mat/0103198 · doi:10.1016/S0921-4534(01)00396-3
Abstract
Superconducting thin films have been prepared on Si-substrates, using pulsed laser deposition from a target composed of a mixture of Mg and MgB2 powders. The films were deposited at room temperature and post-annealed at 600 degrees C. The zero resistance transition temperatures were 12 K, with an onset transition temperature of 27 K. Special care has been taken to avoid oxidation of Mg in the laser plasma and deposited film, by optimizing the background pressure of Ar gas in the deposition chamber. For this the optical emission in the visible range from the plasma has been used as indicator. Preventing Mg from oxidation was found to be essential to obtain superconducting films.
References in corpus (6)
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- MgB2 superconductor thin films on Si and Al2O3 substrates
- Influence of the starting composition on the structural and superconducting properties of MgB2 phase
- Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
- Optical emission investigation of laser-produced MgB2 plume expanding in an Ar buffer gas
- In situ annealing of superconducting MgB2 films prepared by pulsed laser deposition
- Lessons from Oxypnictide Thin Films
- MgB2 coated superconducting tapes with high critical current densities fabricated by hybrid physical-chemical vapor deposition
- A study of Mg adsorption on Si(001) surface from first principles