Shot Noise in Negative-Differential-Conductance Devices

Abstract

We have compared the shot-noise properties at T = 4.2 K of a double-barrier resonant-tunneling diode and a superlattice tunnel diode, both of which exhibit negative differential-conductance (NDC) in their current-voltage characteristics. While the noise spectral density of the former device was greatly enhanced over the Poissonian value of 2eI in the NDC region, that of the latter device remained 2eI. This result implies that charge accumulation, not system instability, is responsible for shot-noise enhancement in NDC devices.

3 pages, 2 figures, submitted to Applied Physics Letters

References in corpus (4)

• Shot Noise in Mesoscopic Conductors
• Enhanced shot noise in resonant tunneling: theory and experiment
• Transition from Sub-Poissonian to Super-Poissonian Shot Noise in Resonant Quantum Wells
• Shot Noise Enhancement in Resonant Tunneling Structures in a Magnetic Field

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• Shot noise in metallic double dot structures with a negative differential conductance
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• Shot-noise characteristics of triple-barrier resonant-tunneling diodes
• Super-Poissonian noise in a Coulomb blockade metallic quantum dot structure
• Shot-noise spectroscopy of energy-resolved ballistic currents