Resonant Two-Magnon Raman Scattering and Photoexcited States in Two-Dimensional Mott Insulators

Abstract

We investigate the resonant two-magnon Raman scattering in two-dimensional (2D) Mott insulators by using a half-filled 2D Hubbard model in the strong coupling limit. By performing numerical diagonalization calculations for small clusters, we find that the Raman intensity is enhanced when the incoming photon energy is not near the optical absorption edge but well above it, being consistent with experimental data. The absence of resonance near the gap edge is associated with the presence of background spins, while photoexcited states for resonance are found to be characterized by the charge degree of freedom. The resonance mechanism is different from those proposed previously.

arXiv commentREVTeX4, 4 pages, 3 figures, to be published in Phys. Rev. Lett

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• Doping-Dependent Raman Resonance in the Model High-Temperature Superconductor HgBa2CuO4+d
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• Electron-phonon coupling in undoped cuprate $YB{a}_{2}C{u}_3{O}_6$ estimated from Raman and optical conductivity spectra
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• Photoemission Signatures of Photoinduced Carriers and Excitons in One-Dimensional Mott Insulators
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