Symmetry of Photoexcited States and Large-Shift Raman Scattering in Two-Dimensional Mott Insulators

Abstract

Symmetry of photoexcited states with two photoinduced carriers in two-dimensional Mott insulators is examined by applying the numerically exact diagonalization method to finite-size clusters of a half-filled Hubbard model in the strong-coupling limit. The symmetry of minimum-energy bound state is found to be s-wave, which is different from a d_{x^2-y^2} wave of a two-hole pair in doped Mott insulators. We demonstrate that the difference is originated from an exchange of fermions due to the motion of a doubly occupied site. Correspondingly large-shift Raman scattering across the Mott gap exhibits a minimum-energy excitation in the A1 (s-wave) channel. We discuss implications of the results for the Raman scattering and other optical experiments.

7 pages, 9 figures, revised version, Journal of Physical Society of Japan, Vol.75, No.3, in press

References in corpus (3)

• Asymmetry of the electronic states in hole- and electron-doped cuprates: Exact diagonalization study of the t-t'-t''-J model
• Exact diagonalization study of optical conductivity in two-dimensional Hubbard model
• Resonant Two-Magnon Raman Scattering and Photoexcited States in Two-Dimensional Mott Insulators

Cited by in corpus (6)

• Charge Recombination in Undoped Cuprates
• Photo-induced nonequilibrium states in Mott insulators
• A Hubbard exciton fluid in a photo-doped antiferromagnetic Mott insulator
• Spin-Mediated Mott Excitons
• Effect of frustration on charge dynamics for a doped two-dimensional triangular Hubbard lattice: Comparison with a square lattice
• Diagnosing electronic phases of matter using photonic correlation functions