Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition

Abstract

Pulsed-laser deposition has been used to grow epitaxial thin films of the giant-dielectric-constant material CaCu_3Ti_4O_{12} on LaAlO_3 and SrTiO_3 substrates with or without various conducting buffer layers. The latter include YBa_2Cu_3O_7, La_{1.85}Sr_{0.15}CuO_{4+δ} and LaNiO_3. Above 100K - 150K the thin films have a temperature independent dielectric constant as do single crystals. The value of the dielectric constant is of the order of 1500 over a wide temperature region, potentially making it a good candidate for many applications. The frequency dependence of its dielectric properties below 100K - 150K indicates an activated relaxation process.

11 pages, 4 figures

References in corpus (1)

• A first-principles study of the structure and lattice dielectric response of CaCu{3}Ti{4}O{12}

Cited by in corpus (8)

• Non-intrinsic origin of the Colossal Dielectric Constants in CaCu3Ti4O12
• Extrinsic models for the dielectric response of CaCu{3}Ti{4}O{12}
• Defect Structure of the High-Dielectric-Constant Perovskite Cacu3ti4o12
• Evidence for power-law frequency dependence of intrinsic dielectric response in the CaCu${}_3$Ti${}_4$O${}_{12}$
• Localized polarons and conductive charge carriers: understanding CaCu${}_3$Ti${}_4$O${}_{12}$ over a broad temperature range
• CaCu_3Ti_4O_12/CaTiO_3 Composite Dielectrics: A Ba/Pb-free Ceramics with High Dielectric Constants
• Effects of post-anneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates
• Broadband dielectric response of CaCu3Ti4O12: From dc to the electronic transition regime