Effects of post-anneal conditions on the dielectric properties of CaCu3Ti4O12 thin films prepared on Pt/Ti/SiO2/Si substrates

Abstract

High-dielectric-constant CaCu3Ti4O12 (CCTO) thin films were prepared on Pt/Ti/SiO2/Si(100) substrates by pulsed-laser deposition. The 480 nm thick polycrystalline films have preferred orientation and show obvious crystallization on the surface. The temperature-dependence of dielectric constant and loss of the Pt/CCTO/Pt capacitors is comparable with that of epitaxial CCTO films grown on oxides substrates. We found that the dielectric properties are very sensitive to the post-annealing atmosphere and temperature. Post-annealing in nitrogen atmosphere produces larger low-frequency dielectric relaxation as the annealing temperature increases, while annealing in oxygen atmosphere at high temperature suppresses the relaxation but lowers the dielectric constant. Such results are attributed to the presence of insulating grain boundary barrier layers.

10 pages, 3 figures

References in corpus (4)

• Materials with Colossal Dielectric Constant: Do They Exist?
• A first-principles study of the structure and lattice dielectric response of CaCu{3}Ti{4}O{12}
• Epitaxial Thin Films of the Giant-Dielectric-Constant Material CaCu_3Ti_4O_{12} Grown by Pulsed-laser Deposition
• Antiferromagnetism in CaCu${}_3$Ti${}_4$O${}_{12}$ studied by magnetic Raman spectroscopy

Cited by in corpus (4)

• Non-intrinsic origin of the Colossal Dielectric Constants in CaCu3Ti4O12
• Colossal dielectric constants in single-crystalline and ceramic CaCu3Ti4O12 investigated by broadband dielectric spectroscopy
• Nanoparticles of the giant dielectric material, CaCu3Ti4O12 from a precursor route
• Effect of calcium stoichiometry on the dielectric response of CaCu3Ti4O12 Ceramics