Growth of c-oriented MgB2 thin films by Pulsed Laser Deposition: structural characterization and electronic anisotropy

Abstract

MgB2 thin films were deposited using Pulsed Laser Deposition (PLD) and ex-situ annealing in Mg atmosphere. The films presented critical temperatures up to 36K and turned out to be preferentially c-oriented both on Al2O3 (r-cut) and MgO(100) substrates. Synchrotron analyses gave also some indications of in plane texturing. The films exhibit very fine grain size (1200angstromin the basal plane and 100angstrom along c-axis) but the general resistivity behavior and the remarkable extension of the irreversible region confirm that the grains boundaries are not barriers for supercurrents. Upper critical field measurements with the magnetic field perpendicular and parallel with respect to the film surface evidenced a field anisotropy ratio of 1.8. The Hc2 values are considerably higher with respect to the bulk ones, namely when the field lies in the basal plane, and the field-temperature phase diagram for the two magnetic field orientations suggest the possibility of strongly enhancing the pinning region by means of texturing.

20 pages, 6 figures

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Cited by in corpus (8)

• In situ epitaxial MgB2 thin films for superconducting electronics
• Effect of two bands on critical fields in MgB2 thin films with various resistivity values
• Growth of superconducting MgB2 thin films via postannealing techniques
• Growth methods of c-axis oriented MgB2 thin films by pulsed laser deposition
• High quality MgB2 thin films in-situ grown by dc magnetron sputtering
• Upper Critical Fields up to 60T in Dirty Magnesium Diboride Thin Films
• Optical emission investigation of laser-produced MgB2 plume expanding in an Ar buffer gas
• Anisotropy in c-oriented MgB2 thin films grown by Pulsed Laser Deposition