Backward diode composed of a metallic and semiconducting nanotube
arXiv:cond-mat/0106040 · doi:10.1103/PhysRevB.64.201404
Abstract
The conditions necessary for a nanotube junction connecting a metallic and semiconducting nanotube to rectify the current are theoretically investigated. A tight binding model is used for the analysis, which includes the Hartree-Fock approximation and the Green's function method. It is found that the junction has a behavior similar to the backward diode if the gate electrode is located nearby and the Fermi level of the semiconducting tube is near the gap. Such a junction would be advantageous since the required length for the rectification could be reduced.
4 pages, RevTeX, uses epsf.sty
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