Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field
arXiv:cond-mat/0004310 · doi:10.1103/PhysRevB.62.10908
Abstract
Bilayer two-dimensional electron systems formed by a thin barrier in the GaAs buffer of a standard heterostructure were investigated by magnetotransport measurements. In magnetic fields oriented parallel to the electron layers, the magnetoresistance exhibits an oscillation associated with the depopulation of the higher occupied subband and the field-induced transition into a decoupled bilayer. Shubnikov-de Haas oscillations in slightly tilted magnetic fields allow to reconstruct the evolution of the electron concentration in the individual subbands as a function of the in-plane magnetic field. The characteristics of the system derived experimentally are in quantitative agreement with numerical self-consistent-field calculations of the electronic structure.
arXiv comment6 pages, 5 figures
References in corpus (4)
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Cited by in corpus (7)
- Orbital Effects of In-Plane Magnetic Fields Probed by Mesoscopic Conductance Fluctuations
- Spin-subband populations and spin polarization of quasi two-dimensional carriers under in-plane magnetic field
- Quasi two-dimensional carriers in dilute-magnetic-semiconductor quantum wells under in-plane magnetic field
- Novel critical field in magneto-resistance oscillation of 2DEG in asymmetric GaAs/AlGaAs double wells measured as a function of the in-plane magnetic field
- Commensurability oscillations in a quasi-two-dimensional electron gas subjected to strong in-plane magnetic field
- In-plane Magnetic Field Dependent Magnetoresistance of Gated Asymmetric Double Quantum Wells
- Longitudinal conductivity and transverse charge redistribution in coupled quantum wells subject to in-plane magnetic fields