Capacitance of Gated GaAs/AlGaAs Heterostructures Subject to In-plane Magnetic Fields

Abstract

A detailed analysis of the capacitance of gated GaAs/AlGaAs heterostructures is presented. The nonlinear dependence of the capacitance on the gate voltage and in-plane magnetic field is discussed together with the capacitance quantum steps connected with a population of higher 2D gas subbands. The results of full self-consistent numerical calculations are compared to recent experimental data.

arXiv comment4 pages, Revtex. 4 PostScript figures in an uuencoded compressed file available upon request. Phys. Rev.B, in press

References in corpus (3)

• In-Plane Magnetic Field Induced Anisotropy of 2D Fermi Contours and the Field Dependent Cyclotron Mass
• Self-Consistent Electron Subbands of Gaas/Algaas Heterostructure in Magnetic Fields Parallel to the Interface
• Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations

Cited by in corpus (5)

• Magnetoresistance and electronic structure of asymmetric GaAs/AlGaAs double quantum wells in the in-plane/tilted magnetic field
• Frequency driven inversion of tunnel magnetoimpedance in magnetic tunnel junctions
• Determination of $g$-factor in InAs two-dimensional electron system by capacitance spectroscopy
• Anisotropic magneto-capacitance in ferromagnetic-plate capacitors
• Beats of the Magnetocapacitance Oscillations in Lateral Semiconductor Superlattices