Capacitance of a Double-Heterojunction GaAs/AlGaAs Structure Subjected to In-Plane Magnetic Fields: Results of Self-Consistent Calculations
arXiv:cond-mat/9308017 · doi:10.1006/spmi.1993.1093
Abstract
The capacitance of a double-heterojunction structure with a wide GaAs undoped layer embedded between two selectively doped AlGaAs barriers is calculated self-consistently as a function of intensity of the in-plane magnetic field. With increasing field intensity the capacitance initially increases and after reaching a maximum decreases toward a high field limit which is less than its zero field value. This behaviour is attributed to 'breathing', or charge redistribution, of the 2D electron gas at individual heterojunctions due to a combination of the confining potential and the magnetic field.
arXiv commentLaTeX, 9 pages, 7 figs. available on request from [email protected] in 1 PS file (compressed and uuencoded)