Probing orbital currents through inverse orbital Hall and Rashba effects
arXiv:2510.05543 · doi:10.1038/s42005-026-02534-6
Abstract
We report a comprehensive experimental investigation of orbital-to-charge conversion in metallic and semiconductor materials, emphasizing the fundamental roles of the inverse orbital Hall effect (IOHE) and the inverse orbital Rashba effect. Using spin pumping driven by ferromagnetic resonance (SP-FMR) and the spin Seebeck effect (SSE), we demonstrate efficient orbital current generation and detection in YIG/Pt/NM structures, where NM is either a metal or a semiconductor. A central finding is the dominance of orbital contributions over spin-related effects, even in systems with weak spin-orbit coupling. In particular, a large enhancement of the SP-FMR and SSE signals is observed in the presence of naturally oxidized Cu in different heterostructures. Furthermore, we identify positive and negative IOHE signals in Ti and Ge, respectively, and extract orbital diffusion lengths in both systems using a diffusive model. Our results confirm the presence of orbital transport and offer valuable insights that may guide the further development of orbitronics.
25 pages, 9 figures, 1 table
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