Negative orbital Hall effect in Germanium

Abstract

Our investigation reveals a groundbreaking discovery of a negative inverse orbital Hall effect (IOHE) in Ge thin films. We employed the innovative orbital pumping technique where spin-orbital coupled current is injected into Ge films using YIG/Pt(2)/Ge($t_{Ge}$) and YIG/W(2)/Ge($t_{Ge}$) heterostructures. Through comprehensive analysis, we observe significant reductions in the signals generated by coherent (RF-driven) and incoherent (thermal-driven) spin-orbital pumping techniques. These reductions are attributed to the presence of a remarkable strong negative IOHE in Ge, showing its magnitude comparable to the spin-to-charge signal in Pt. Our findings reveal that although the spin-to-charge conversion in Ge is negligible, the orbital-to-charge conversion exhibits large magnitude. Our results are innovative and pioneering in the investigation of negative IOHE by the injection of spin-orbital currents.

arXiv comment6 pages and 4 figures

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Cited by in corpus (7)

• Anomalous Spin and Orbital Hall Phenomena in Antiferromagnetic Systems
• Probing orbital currents through inverse orbital Hall and Rashba effects
• Coexistent multifractal mesoscopic fluctuations in Integer Quantum Hall Transition and in Orbital Hall Transition
• Anisotropy-Driven Anomalous Inverse Orbital Hall Effect in Fe Films
• Orbital Hall effect in spin-3/2 hole-doped semiconductors and its implications for orbitronics
• Investigating spin and orbital effects via spin-torque ferromagnetic resonance
• Ge as an orbitronic platform: giant in-plane orbital magneto-electric effect in a 2-dimensional hole gas