Robust quantum Hall resistance standard from uniform wafer-scale epitaxial graphene on SiC

Abstract

We report high-precision resistance measurements on quantum Hall resistance devices fabricated from uniform epitaxial graphene grown by propane-hydrogen chemical vapor deposition on a two-inch silicon carbide substrate. Through molecular doping, we achieve a low carrier density regime ($n_{\mathrm{s}}<$ 1.5 \textperiodcentered 10${}^{11}$ cm${}^{-2}$) combined with high mobility ($\upmu \geq$ 6000 cm${}^2$ V${}^{-1}$ s${}^{-1}$) at low temperature. Accurate quantization of the Hall resistance is demonstrated at magnetic flux densities as low as 3.5 T, temperatures up to 8 K, and measurement currents up to 325 $\upmu$A, with relative measurement uncertainties of a few parts per billion. A stability diagram mapping dissipation as a function of temperature and current provides insight into optimal doping conditions that maximize the breakdown current. All measurements were carried out in a pulse-tube-based cryomagnetic system, enabling simplified and continuous operation of the quantum Hall resistance standard without liquid helium consumption.

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