Milli-Tesla Quantization enabled by Tuneable Coulomb Screening in Large-Angle Twisted Graphene
arXiv:2507.23626 · doi:10.1038/s41467-025-62492-5
Abstract
The electronic quality of graphene has improved significantly over the past two decades, revealing novel phenomena. However, even state-of-the-art devices exhibit substantial spatial charge fluctuations originating from charged defects inside the encapsulating crystals, limiting their performance. Here, we overcome this issue by assembling devices in which graphene is encapsulated by other graphene layers while remaining electronically decoupled from them via a large twist angle (~10-30°). Doping of the encapsulating graphene layer introduces strong Coulomb screening, maximized by the sub-nanometer distance between the layers, and reduces the inhomogeneity in the adjacent layer to just a few carriers per square micrometre. The enhanced quality manifests in Landau quantization emerging at magnetic fields as low as ~5 milli-Tesla and enables resolution of a small energy gap at the Dirac point. Our encapsulation approach can be extended to other two-dimensional systems, enabling further exploration of the electronic properties of ultrapure devices.
References in corpus (12)
- Boron nitride substrates for high-quality graphene electronics
- STM Spectroscopy of ultra-flat graphene on hexagonal boron nitride
- A self-consistent theory for graphene transport
- Superlattice-induced insulating states and valley-protected orbits in twisted bilayer graphene
- Origin of band gaps in graphene on hexagonal boron nitride
- Is graphene in vacuum an insulator?
- How close can one approach the Dirac point in graphene experimentally?
- Giant magnetoresistance of Dirac plasma in high-mobility graphene
- High quality electrostatically defined hall bars in monolayer graphene
- Single-electron gap in the spectrum of twisted bilayer graphene
- Understanding limits to mobility in ultra-high-mobility GaAs two-dimensional electron systems: The quest for 100 million cm/Vs and beyond
- Accurate Measurement of the Gap of Graphene/hBN Moiré Superlattice through Photocurrent Spectroscopy