Electric-field control of two-dimensional ferromagnetic properties by chiral ionic gating

Abstract

Chiral molecular systems offer unique pathways to control spin and magnetism beyond conventional symmetry operations. Here, we demonstrate that chiral ionic liquids enable electric-field modulation of two-dimensional (2D) ferromagnetism in FeSi(111) thin films via electric double-layer transistor (EDLT) gating. FeSi hosts chemically-stable, surface-confined ferromagnetism without bulk moments, making the interfacial spins highly responsive to chiral-ion adsorption. Using both achiral and chiral ionic liquids, we systematically compare electrochemical and electrostatic gating effects. While both gating modes modulate magnetic properties such as anomalous Hall conductivity and coercive field, only chiral ionic gating biases the ratio of up- and down-magnetized domains in a handedness-dependent manner, evidencing chirality-induced symmetry breaking. This work establishes chiral ion gating as a novel strategy for controlling magnetic order and opens new directions for chiral spintronics.

References in corpus (9)

• Discovery of intrinsic ferromagnetism in 2D van der Waals crystals
• Gate-tunable Room-temperature Ferromagnetism in Two-dimensional Fe${}_3$GeTe${}_2$
• Gate-induced Superconductivity in atomically thin MoS2 crystals
• Tailoring Magnetic Anisotropy in Cr${}_2$Ge${}_2$Te${}_6$ by Electrostatic Gating
• Electric-field-induced superconductivity in electrochemically-etched ultrathin FeSe films on SrTiO3 and MgO
• Charge Redistribution and Spin Polarization Driven by Correlation Induced Electron Exchange in Chiral Molecules
• Signatures of electronic correlations in iron silicide
• Giant chirality-induced spin-selectivity of polarons
• Gate-tunable ferromagnetism in a van der Waals magnetic semimetal