Nanowire design by deep learning for energy efficient photonic technologies
arXiv:2501.10911 · doi:10.1088/2399-1984/ade4a6
Abstract
This work describes our vision and proposal for the design of next generation photonic devices based on custom-designed semiconductor nanowires. The integration of multi-million-atom electronic structure and optical simulations with the supervised machine learning models will pave the way for transformative nanowire-based technologies, offering opportunities for the next generation energy-efficient greener photonics.
12 pages, 4 figures;
References in corpus (19)
- Wannier90: A Tool for Obtaining Maximally-Localised Wannier Functions
- Maximally-localized Wannier functions for entangled energy bands
- Nanolasers grown on silicon
- Tight-binding analysis of the electronic structure of dilute bismide alloys of GaP and GaAs
- Band engineering in dilute nitride and bismide semiconductor lasers
- Deep Learning Reveals Underlying Physics of Light-matter Interactions in Nanophotonic Devices
- Impact of alloy disorder on the band structure of compressively strained GaBiAs
- Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data
- Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
- Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
- Atomic-level Characterisation of Quantum Computer Arrays by Machine Learning
- Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties
- Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures
- Atomistic tight-binding study of electronic structure and interband optical transitions in GaBiAs/GaAs quantum wells
- Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules
- Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells
- Tuning of polarisation sensitivity in closely-stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics
- Towards low-loss telecom-wavelength photonic devices by designing GaBiAs/GaAs coreshell nanowires
- Tunable band-gap and isotropic light absorption from bismuth-containing GaAs coreshell and multishell nanowires