Polarization Response in InAs Quantum Dots: Theoretical Correlation between Composition and Electronic Properties
arXiv:1203.3855 · doi:10.1088/0957-4484/23/16/165202
Abstract
III-V growth and surface conditions strongly influence the physical structure and resulting optical properties of self-assembled quantum dots (QDs). Beyond the design of a desired active optical wavelength, the polarization response of QDs is of particular interest for optical communications and quantum information science. Previous theoretical studies based on a pure InAs QD model failed to reproduce experimentally observed polarization properties. In this work, multi-million atom simulations are performed to understand the correlation between chemical composition and polarization properties of QDs. A systematic analysis of QD structural parameters leads us to propose a two layer composition model, mimicking In segregation and In-Ga intermixing effects. This model, consistent with mostly accepted compositional findings, allows to accurately fit the experimental PL spectra. The detailed study of QD morphology parameters presented here serves as a tool for using growth dynamics to engineer the strain field inside and around the QD structures, allowing tuning of the polarization response.
8 pages, 6 figures; accepted for publication in IOP Nanotechnology journal
References in corpus (6)
- Effect of wetting layers on the strain and electronic structure of InAs self-assembled quantum dots
- Moving towards nano-TCAD through multimillion atom quantum dot simulations matching experimental data
- Dependence of the electronic structure of self-assembled InGaAs/GaAs quantum dots on height and composition
- Experimental and Atomistic Theoretical Study of Degree of Polarization from Multi-layer InAs/GaAs Quantum Dots
- Quantitative Excited State Spectroscopy of a Single InGaAs Quantum Dot Molecule through Multi-million Atom Electronic Structure Calculations
- Experimental and Theoretical Study of Polarization-dependent Optical Transitions from InAs Quantum Dots at Telecommunication-Wavelengths (1.3-1.5μm)
Cited by in corpus (8)
- Donor hyperfine Stark shift and the role of central-cell corrections in tight-binding theory
- Impact of disorder on the optoelectronic properties of GaNAsBi alloys and heterostructures
- Large-scale atomistic simulations demonstrate dominant alloy disorder effects in GaBiAs/GaAs multiple quantum wells
- Understanding electric field control of electronic and optical properties of strongly-coupled multi-layer quantum dot molecules
- Tuning of polarisation sensitivity in closely-stacked trilayer InAs/GaAs quantum dots induced by overgrowth dynamics
- Electron ground state factor in embedded InGaAs quantum dots: An atomistic study
- The Emission Directionality of Electronic Intraband Transitions in Stacked Quantum Dots
- Nanowire design by deep learning for energy efficient photonic technologies