Effective K valley Hamiltonian for TMD bilayers under pressure and application to twisted bilayers with pressure-induced topological phase transitions
arXiv:2409.19662 · doi:10.1103/5k9m-mfbz
Abstract
Motivated by recent studies on topologically non-trivial moiré bands in twisted bilayer transition metal dichalcogenides (TMDs), we study MoTe bilayer systems subject to pressure, which is applied perpendicular to the material surface. We start our investigation by first considering an untwisted bilayer system with an arbitrary relative shift between layers; a symmetry analysis for this case permits us to obtain a simplified effective low-energy Hamiltonian valid near the important valley region of the Brillouin zone. Ab initio density functional theory (DFT) was then employed to obtain relaxed geometric structures for pressures within the range of 0.0 - 3.5 GPa and corresponding band structures. The DFT data were then fitted to the low-energy Hamiltonian to obtain a pressure-dependent Hamiltonian. We then apply our model to a twisted system by treating the twist as a position-dependent shift between layers - here, we assume rigid layers, which is a crucial simplification. In summary, this approach allowed us to obtain the explicit analytical expressions for a Hamiltonian that describes a twisted MoTe\textsubscript{2} bilayer under pressure. Our Hamiltonian then permitted us to study the impact of pressure on the band topology of the twisted system. As a result, we identified many pressure-induced topological phase transitions as indicated by changes in valley Chern numbers. Moreover, we found that pressure could be employed to flatten bands in some of the cases we considered.
17 pages, 17 figures; modified the title; fixed some typos
References in corpus (28)
- Quantum ESPRESSO: a modular and open-source software project for quantum simulations of materials
- Valley polarization in MoS2 monolayers by optical pumping
- Optical detection of Mott and generalized Wigner crystal states in WSe2/WS2 moiré superlattices
- Signatures of Fractional Quantum Anomalous Hall States in Twisted MoTe2 Bilayer
- Observation of Fractionally Quantized Anomalous Hall Effect
- Libxc: a library of exchange and correlation functionals for density functional theory
- Quantum anomalous Hall effect from intertwined moiré bands
- Integer and fractional Chern insulators in twisted bilayer MoTe2
- Observation of integer and fractional quantum anomalous Hall effects in twisted bilayer MoTe2
- Continuous Mott transition in semiconductor moiré superlattices
- Fractional Chern Insulator in Twisted Bilayer MoTe
- Electrically tunable valley dynamics in twisted WSe/WSe bilayers
- Programming Correlated Magnetic States via Gate Controlled Moiré Geometry
- Continuum model for relaxed twisted bilayer graphenes and moiré electron-phonon interaction
- Family of ideal Chern flat bands with arbitrary Chern number in chiral twisted graphene multilayers
- Pressure--enhanced fractional Chern insulators in moiré transition metal dichalcogenides along a magic line
- Optically induced flat bands in twisted bilayer graphene
- Designing Ultra-Flat Bands in Twisted Bilayer Materials at Large Twist Angles without specific degree
- Interaction-driven topological phase diagram of twisted bilayer MoTe
- General continuum model for twisted bilayer graphene and arbitrary smooth deformations
- Floquet-Engineered Topological Flat Bands in Irradiated Twisted Bilayer Graphene
- High-order nonlinear optical response of a twisted bilayer graphene
- Continuum effective Hamiltonian for graphene bilayers for an arbitrary smooth lattice deformation from microscopic theories
- Effective Floquet Hamiltonians for periodically-driven twisted bilayer graphene
- Pressure induced gap modulation and topological transitions in twisted bilayer and double bilayer graphene
- Tailoring the band structure of twisted double bilayer graphene with pressure
- Floquet-engineering topological transitions in a twisted transition metal dichalcogenide homobilayer
- Band structure and band topology in twisted homotrilayer transition metal dichalcogenides