Interplay of electronic crystals with integer and fractional Chern insulators in moiré pentalayer graphene
arXiv:2408.10133 · doi:10.1103/PhysRevX.15.011045
Abstract
The rapid development of moiré quantum matter has recently led to the remarkable discovery of the fractional quantum anomalous Hall effect, and sparked predictions of other novel correlation-driven topological states. Here, we investigate the interplay of electronic crystals with integer and fractional Chern insulators in a moiré lattice of rhomobohedral pentalayer graphene (RPG) aligned with hexagonal boron nitride. At a doping of one electron per moiré unit cell, we see a correlated insulator with a Chern number that can be tuned between and by an electric displacement field, accompanied by an array of other such insulators formed at fractional band fillings, . Collectively, these states likely correspond to trivial and topological electronic crystals, some of which spontaneously break the discrete translational symmetry of the moiré lattice. Upon applying a modest magnetic field, a narrow region forms around in which transport measurements imply the emergence of a fractional Chern insulator, along with hints of weaker states at other fractional . In the same sample, we also see a unique sequence of incipient Chern insulators arising over a broad range of incommensurate band filling near two holes per moiré unit cell. Our results establish moiré RPG as a fertile platform for studying the competition and potential intertwining of electronic crystallization and topological charge fractionalization.
8 pages, 4 figures, extended data, 10 extended data figures, 13 supplementary information figures
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