Boran Zhou

most citedVariational wavefunction for Mott insulator at finite

U

using ancilla qubits

1 citations · 1 across the 2 of their papers we have counts for

collaborators

2 papers

cond-mat.str-el2024★ 1 cited

Variational wavefunction for Mott insulator at finite $U$ using ancilla qubits

Boran Zhou, Hui-Ke Jin, Ya-Hui Zhang

The Mott regime with finite $U$ offers a promising platform for exploring novel phases of matter, such as quantum spin liquids (QSL) that exhibit fractionalization and emergent gau…

cond-mat.str-el2024

Type II t-J model in charge transfer regime in bilayer La $_{3}$ Ni $_{2}$ O $_{7}$ and trilayer La $_{4}$ Ni $_{3}$ O $_{10}$

Hanbit Oh, Boran Zhou, Ya-Hui Zhang

Recent observations of an 80 K superconductor in La $_{3}$ Ni $_{2}$ O $_{7}$ under high pressure have attracted significant attention. Recent experiments indicate that La $_{3}$ Ni $_{2}$ O $_{7}$ may…

Variational wavefunction for Mott insulator at finite U using ancilla qubits

Type II t-J model in charge transfer regime in bilayer La3​Ni2​O7​ and trilayer La4​Ni3​O10​

Variational wavefunction for Mott insulator at finite $U$ using ancilla qubits

Type II t-J model in charge transfer regime in bilayer La $_{3}$ Ni $_{2}$ O $_{7}$ and trilayer La $_{4}$ Ni $_{3}$ O $_{10}$